vishay tlhg / o / p / r / y4900 document number 83009 rev. 1.5, 31-aug-04 vishay semiconductors www.vishay.com 1 e2 pb pb-free 19222 high efficiency led in ? 3 mm clear package description the tlh.4900 series was developed for applications where high light output is required. it is housed in a 3 mm clear plastic package. the small viewing angle of these devices provides a high brightness. all leds are categorized in luminous intensity groups. the green and yellow leds are categorized additionally in wavelength groups. that allows users to assemble leds with uniform appearance. features ? choice of five bright colors standard ? 3 mm (t-1) package small mechanical tolerances suitable for dc and high peak current very small viewing angle luminous intensity categorized yellow and green color categorized lead-free device applications status lights off / on indicator background illumination readout lights maintenance lights legend light parts table absolute maximum ratings t amb = 25 c, unless otherwise specified tlhr4900 , tlho4900 , TLHY4900 , tlhp4900 part color, luminous intensity angle of half intensity ( ? ) technology tlhr4900 red, i v > 6.3 mcd 16 gaasp on gap tlho4900 soft orange, i v > 10 mcd 16 gaasp on gap TLHY4900 yellow, i v > 10 mcd 16 gaasp on gap tlhg4900 green, i v > 16 mcd 16 gap on gap tlhp4900 pure green, i v > 4 mcd 16 gap on gap parameter test condition symbol value unit reverse voltage v r 6v dc forward current t amb 60 c i f 30 ma surge forward current t p 10 si fsm 1a power dissipation t amb 60 c p v 100 mw junction temperature t j 100 c operating temperature range t amb - 40 to + 100 c
www.vishay.com 2 document number 83009 rev. 1.5, 31-aug-04 vishay tlhg / o / p / r / y4900 vishay semiconductors optical and electrical characteristics t amb = 25 c, unless otherwise specified red tlhr4900 1) in one packing unit i vmin /i vmax 0.5 soft orange tlho4900 1) in one packing unit i vmin /i vmax 0.5 yellow TLHY4900 1) in one packing unit i vmin /i vmax 0.5 storage temperature range t stg - 55 to + 100 c soldering temperature t 5 s, 2 mm from body t sd 260 c thermal resistance junction/ ambient r thja 400 k/w parameter test condition symbol min ty p. max unit luminous intensity 1) i f = 10 ma i v 6.3 13 mcd dominant wavelength i f = 10 ma d 612 625 nm peak wavelength i f = 10 ma p 635 nm angle of half intensity i f = 10 ma ? 16 deg forward voltage i f = 20 ma v f 23v reverse voltage i r = 10 av r 615 v junction capacitance v r = 0, f = 1 mhz c j 50 pf parameter test condition symbol min ty p. max unit luminous intensity 1) i f = 10 ma i v 10 26 mcd dominant wavelength i f = 10 ma d 598 611 nm peak wavelength i f = 10 ma p 605 nm angle of half intensity i f = 10 ma ? 16 deg forward voltage i f = 20 ma v f 2.4 3 v reverse voltage i r = 10 av r 615 v junction capacitance v r = 0, f = 1 mhz c j 50 pf parameter test condition symbol min ty p. max unit luminous intensity 1) i f = 10 ma i v 10 26 mcd dominant wavelength i f = 10 ma d 581 594 nm peak wavelength i f = 10 ma p 585 nm angle of half intensity i f = 10 ma ? 16 deg forward voltage i f = 20 ma v f 2.4 3 v reverse voltage i r = 10 av r 615 v junction capacitance v r = 0, f = 1 mhz c j 50 pf parameter test condition symbol value unit
vishay tlhg / o / p / r / y4900 document number 83009 rev. 1.5, 31-aug-04 vishay semiconductors www.vishay.com 3 green tlhg4900 1) in one packing unit i vmin /i vmax 0.5 pure green tlhp4900 1) in one packing unit i vmin /i vmax 0.5 typical characteristics (t amb = 25 c unless otherwise specified) parameter test condition symbol min ty p. max unit luminous intensity 1) i f = 10 ma i v 16 37 mcd dominant wavelength i f = 10 ma d 562 575 nm peak wavelength i f = 10 ma p 565 nm angle of half intensity i f = 10 ma ? 16 deg forward voltage i f = 20 ma v f 2.4 3 v reverse voltage i r = 10 av r 615 v junction capacitance v r = 0, f = 1 mhz c j 50 pf parameter test condition symbol min ty p. max unit luminous intensity 1) i f = 10 ma i v 413 mcd dominant wavelength i f = 10 ma d 555 565 nm peak wavelength i f = 10 ma p 555 nm angle of half intensity i f = 10 ma ? 16 deg forward voltage i f = 20 ma v f 2.4 3 v reverse voltage i r = 10 av r 615 v junction capacitance v r = 0, f = 1 mhz c j 50 pf figure 1. power dissipation vs. ambient temperature 100 80 60 40 0 25 50 75 100 125 p - power dissipation ( mw ) v t amb - ambient temperature ( c) 95 10904 20 0 figure 2. forward current vs. ambient temperature for ingan 0 10 20 30 40 60 i - forward current ( ma) f 95 10905 50 t amb - ambient temperature ( c) 100 80 60 40 20 0
www.vishay.com 4 document number 83009 rev. 1.5, 31-aug-04 vishay tlhg / o / p / r / y4900 vishay semiconductors figure 3. forward current vs. pulse length figure 4. rel. luminous intens ity vs. angular displacement figure 5. forward current vs. forward voltage 0.02 0.05 0.1 0.2 1 0.5 t p /t= 0.01 t amb 65 c 0.01 0.1 1 10 1 10 100 1000 10000 t p - pulse length ( ms ) 100 95 10047 i - forward current ( ma ) f 0.4 0.2 0 0.2 0.4 0.6 95 10044 0.6 0.9 0.8 0 30 10 20 40 50 60 70 80 0.7 1.0 i - relative luminous intensity v rel red t p /t = 0.001 t p =10 s 0.1 1 10 100 1000 95 10026 v f - forward voltag e(v) i - forward current ( ma ) f 10 8 6 4 2 0 figure 6. rel. luminous intensity vs. ambient temperature figure 7. rel. lumin. intensity vs. forw. current/duty cycle figure 8. relative luminous intensity vs. forward current 0 0 0.4 0.8 1.2 1.6 95 10027 20 40 60 80 100 i - relative luminous intensity v rel t amb - ambient temperature ( c) i f =10ma red 10 20 50 100 200 0 0.4 0.8 1.2 1.6 2.4 95 10321 500 0.5 0.2 0.1 0.05 0.02 1 i f (ma) t p /t 2.0 red i - relative luminous intensity vre l 0.01 0.1 1 10 i f - forward current ( ma ) 100 10 95 10029 i - relative luminous intensity v rel red 1
vishay tlhg / o / p / r / y4900 document number 83009 rev. 1.5, 31-aug-04 vishay semiconductors www.vishay.com 5 figure 9. relative intensity vs. wavelength figure 10. forward current vs. forward voltage figure 11. rel. luminous intensity vs. ambient temperature 590 610 630 650 670 0 0.2 0.4 0.6 0.8 1.2 690 95 10040 - wavelength ( nm ) 1.0 red i - relative luminous intensity vre l 0.1 1 10 100 95 9990 i - forward current ( ma ) f soft orange v f - forward voltag e(v) 5 4 3 2 1 0 95 9994 soft orange 0 0.4 0.8 1.2 1.6 2.0 100 i - relative luminous intensity v rel t amb - ambient temperature ( c) 0 20406080 figure 12. rel. lumin. intensity vs. forw. current/duty cycle figure 13. relative luminous intensity vs. forward current figure 14. relative intensity vs. wavelength 95 10259 soft orange 10 20 50 100 200 0 0.4 0.8 1.2 1.6 2.4 500 0.5 0.2 0.1 0.05 0.02 1 i f (ma) t p /t 2.0 i - relative luminous intensity vre l 0.01 0.1 1 10 100 1 10 i f - forward current ( ma ) 95 9997 i - relative luminous intensity v rel soft orange 95 10324 soft orange 570 590 610 630 650 0 0.2 0.4 0.6 0.8 1.2 670 - wavelength ( nm ) 1.0 i - relative luminous intensity vrel
www.vishay.com 6 document number 83009 rev. 1.5, 31-aug-04 vishay tlhg / o / p / r / y4900 vishay semiconductors figure 15. forward current vs. forward voltage figure 16. rel. luminous intensity vs. ambient temperature figure 17. rel. lumin. intensity vs. forw. current/duty cycle 0.1 1 10 100 1000 10 8 6 4 2 0 95 10030 v f - forward voltag e(v) i - forward current ( ma ) f yellow t p /t = 0.001 t p =10 s 0 0 0.4 0.8 1.2 1.6 95 10031 20 40 60 80 100 i - relative luminous intensity v rel t amb - ambient temperature ( c) yellow i f =10ma yellow 10 20 50 100 200 0 0.4 0.8 1.2 1.6 2.4 95 10260 500 0.5 0.2 0.1 0.05 0.02 1 i f (ma) t p /t i - relative luminous intensity v rel 2.0 figure 18. relative luminous intensity vs. forward current figure 19. relative intensity vs. wavelength figure 20. forward current vs. forward voltage yellow i f - forward current ( ma ) 100 0.1 1 10 95 10033 i - relative luminous intensity v rel 10 1 0.01 550 570 590 610 630 0 0.2 0.4 0.6 0.8 1.2 650 95 10039 - - wavelength ( nm ) 1.0 yellow i - relative luminous intensity vrel 0.1 1 10 100 1000 10 8 6 4 2 0 95 10034 v f - forward voltag e(v) i - forward current ( ma ) f green t p /t = 0.001 t p =10 s
vishay tlhg / o / p / r / y4900 document number 83009 rev. 1.5, 31-aug-04 vishay semiconductors www.vishay.com 7 figure 21. rel. luminous intensity vs. ambient temperature figure 22. specific luminous intensity vs. forward current figure 23. relative luminous intensity vs. forward current 0 0.4 0.8 1.2 1.6 95 10035 i - relative luminous intensity v rel green i f =10ma t amb - ambient temperature ( c) 20 40 60 80 0 100 10 20 50 100 200 0 0.4 0.8 1.2 1.6 2.4 95 10263 500 v rel 2.0 green i - specific luminous intensity i f (ma) 0.5 0.2 0.1 0.05 0.02 1 t p /t i f - forward current ( ma ) 100 green 0.1 1 10 95 10037 i - relative luminous intensity v rel 10 1 figure 24. relative intensity vs. wavelength figure 25. forward current vs. forward voltage figure 26. rel. luminous intensity vs. ambient temperature 520 540 560 580 600 0 0.2 0.4 0.6 0.8 1.2 620 95 10038 - - wavelength ( nm ) 1.0 green i - relative luminous intensity vrel 01234 0.1 1 10 100 5 95 9988 pure green f i ?f orward current ( ma ) v f ? forward voltag e(v) 0 0.4 0.8 1.2 1.6 2.0 95 9991 pure green i - relative luminous intensity vrel t amb ? ambient temperature ( c) 0 100 80 60 40 20
www.vishay.com 8 document number 83009 rev. 1.5, 31-aug-04 vishay tlhg / o / p / r / y4900 vishay semiconductors figure 27. specific luminous intensity vs. forward current figure 28. relative luminous intensity vs. forward current figure 29. relative intensity vs. wavelength 95 10261 10 1000 100 0 0.4 0.8 1.2 1.6 2.4 2.0 pure green i - specific luninous flux spec i f - forward current ( ma ) 0.01 0.1 1 10 100 10 1 95 9998 pure green i - relative luminous intensity vrel i f - forward current ( ma ) 500 520 540 560 580 0 0.2 0.4 0.6 0.8 1.2 600 95 10325 1.0 pure green - wavelength ( nm ) i - relative luminous intensity vrel
vishay tlhg / o / p / r / y4900 document number 83009 rev. 1.5, 31-aug-04 vishay semiconductors www.vishay.com 9 package dimensions in mm 95 10914
www.vishay.com 10 document number 83009 rev. 1.5, 31-aug-04 vishay tlhg / o / p / r / y4900 vishay semiconductors ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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